METHOD OF MANUFACTURING NITRIDE-GALLIUM-BASED SEMICONDUCTOR LIGHT EMITTING DEVICE
摘要
PURPOSE: A method for manufacturing a nitride-gallium-based semiconductor light emitting device is provided to improve electrical conductivity by increasing the mobility and the doping concentration of holes. CONSTITUTION: A light emitting structure (140) is formed on a substrate. The light emitting structure includes an n-type semiconductor layer, an active layer, and a p-type semiconductor layer (130). A first thermal process is performed on the p-type semiconductor layer. An organic cleaning process is performed on the p-type semiconductor layer. A mask pattern (160) is formed on the upper surface of the p-type semiconductor layer.
申请公布号
KR20130102211(A)
申请公布日期
2013.09.17
申请号
KR20120023265
申请日期
2012.03.07
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
KIM, HYUN YOUNG;SONG, SANG YEOB;HUR, WON GOO;KIM, GI BUM;HONG, JIN GI