发明名称 Correlation of device manufacturing defect data with device electrical test data
摘要 Various embodiments related to correlating a location of a defect on a substrate for a semiconductor device to an electrical significance of a device structure at that location are disclosed. For example, one embodiment includes receiving a defect location for the location on the substrate where the defect was detected; receiving a physical representation of the semiconductor device for the defect location; generating a significance determination indicating whether the defect is located in an electrically significant region by correlating the defect location to logical and physical layout information included in the physical representation; and displaying the significance determination.
申请公布号 US8539389(B2) 申请公布日期 2013.09.17
申请号 US201113151018 申请日期 2011.06.01
申请人 AKAR ARMAGAN;SANCHEZ RALPH;TESEDA CORPORATION 发明人 AKAR ARMAGAN;SANCHEZ RALPH
分类号 G06F17/50 主分类号 G06F17/50
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