发明名称 |
Semiconductor device structures with modulated and delta doping and related methods |
摘要 |
A semiconductor device may include a doped semiconductor region wherein a dopant concentration of the semiconductor region is modulated over a plurality of intervals. Each interval may include at least one portion having a relatively low dopant concentration and at least one portion having a relatively high dopant concentration. A plurality of delta doped layers may be included in the plurality of intervals. Related methods are also discussed.
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申请公布号 |
US8536615(B1) |
申请公布日期 |
2013.09.17 |
申请号 |
US20100848600 |
申请日期 |
2010.08.02 |
申请人 |
DRISCOLL DANIEL CARLETON;CHAVAN ASHONITA;SAXLER ADAM WILLIAM;CREE, INC. |
发明人 |
DRISCOLL DANIEL CARLETON;CHAVAN ASHONITA;SAXLER ADAM WILLIAM |
分类号 |
H01L33/00 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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