| 摘要 |
A device mismatch corner model for semiconductor device simulation is provided. A method of providing the device mismatch corner model for semiconductor device simulation, includes selecting a type of electric performance target F for a type of device, determining a number N of semiconductor devices for which mismatches among electric performance targets of the semiconductor devices are simulated, and determining a desired k-sigma mismatch corner value among N(N-1)/2 pairs of the electric performance targets. The method further includes identifying at least one electric parameter P of the semiconductor devices that has a mismatch component and contributes to the mismatches among the electric performance targets of the semiconductor devices, determining a plurality of corner values for the at least one electrical parameter P, and running at most N circuit simulations based on the determined plurality of corner values which are recalculated for each of the circuit simulations.
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