发明名称 |
Memory program discharge circuit of bit lines with multiple discharge paths |
摘要 |
A memory integrated circuit has an array of nonvolatile memory cells, bit lines accessing the array of nonvolatile memory cells, and bit line discharge circuitry. The bit lines have multiple discharge paths for a bit line at a same time, during a program operation.
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申请公布号 |
US8537630(B2) |
申请公布日期 |
2013.09.17 |
申请号 |
US201213722530 |
申请日期 |
2012.12.20 |
申请人 |
CHEN CHUNG-KUANG;CHEN HAN-SUNG;HUNG CHUN-HSIUNG;MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
CHEN CHUNG-KUANG;CHEN HAN-SUNG;HUNG CHUN-HSIUNG |
分类号 |
G11C7/00 |
主分类号 |
G11C7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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