发明名称 |
Method of manufacturing a semiconductor device and semiconductor device |
摘要 |
A method of manufacturing a semiconductor device has forming, in a dielectric film, a first opening and a second opening located in the first opening, forming a first metal film containing a first metal over a whole surface, etching the first metal film at a bottom of the second opening using a sputtering process and forming a second metal film containing a second metal over the whole surface, and burying a conductive material in the second opening and the first opening.
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申请公布号 |
US8536708(B2) |
申请公布日期 |
2013.09.17 |
申请号 |
US201213605020 |
申请日期 |
2012.09.06 |
申请人 |
AKIYAMA SHINICHI;KAWAMURA KAZUO;SAKAI HISAYA;WATATANI HIROFUMI;OKUBO KAZUYA;FUJITSU SEMICONDUCTOR LIMITED |
发明人 |
AKIYAMA SHINICHI;KAWAMURA KAZUO;SAKAI HISAYA;WATATANI HIROFUMI;OKUBO KAZUYA |
分类号 |
H01L23/48;H01L23/52;H01L29/40 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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