NICKELIDE SOURCE/DRAIN STRUCTURES FOR CMOS TRANSISTORS

摘要

PURPOSE: A nickelide source/drain structure for a CMOS transistor is provided to rapidly increase the speed of a device by forming a contact scheme of low resistivity. CONSTITUTION: A source/drain region (28) is adjacent to a gate structure. The source/drain region includes a channel material (22). The channel material is at least binary material. A metal contact structure (42) is combined with the source/drain material (34). The source/drain material is made of a low resistance metal.