发明名称 |
Techniques for providing a semiconductor memory device |
摘要 |
Techniques for providing a semiconductor memory device are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus including a first region and a second region. The apparatus may also include a body region disposed between the first region and the second region and capacitively coupled to a plurality of word lines, wherein each of the plurality of word lines is capacitively coupled to different portions of the body region.
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申请公布号 |
US8537610(B2) |
申请公布日期 |
2013.09.17 |
申请号 |
US20100834418 |
申请日期 |
2010.07.12 |
申请人 |
OKHONIN SERGUEI;KOLDIAEV VIKTOR I;NAGOGA MIKHAIL;LUTHRA YOGESH;MICRON TECHNOLOGY, INC. |
发明人 |
OKHONIN SERGUEI;KOLDIAEV VIKTOR I;NAGOGA MIKHAIL;LUTHRA YOGESH |
分类号 |
G11C16/04;G11C11/24;H01L29/788 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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