发明名称 Techniques for providing a semiconductor memory device
摘要 Techniques for providing a semiconductor memory device are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus including a first region and a second region. The apparatus may also include a body region disposed between the first region and the second region and capacitively coupled to a plurality of word lines, wherein each of the plurality of word lines is capacitively coupled to different portions of the body region.
申请公布号 US8537610(B2) 申请公布日期 2013.09.17
申请号 US20100834418 申请日期 2010.07.12
申请人 OKHONIN SERGUEI;KOLDIAEV VIKTOR I;NAGOGA MIKHAIL;LUTHRA YOGESH;MICRON TECHNOLOGY, INC. 发明人 OKHONIN SERGUEI;KOLDIAEV VIKTOR I;NAGOGA MIKHAIL;LUTHRA YOGESH
分类号 G11C16/04;G11C11/24;H01L29/788 主分类号 G11C16/04
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