BIO SENSOR USING SOLUTION-PROCESSED OXIDE THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: An oxide thin film transistor biosensor is provided to show reliability and reproducibility, superior resistance to environmental stress and heat, and superior electrical characteristics. CONSTITUTION: A field effect transistor comprises: a substrate (200); a gate electrode (210) which is formed on the substrate; a gate insulation film (220) which is formed on the gate electrode; an oxide semiconductor layer (230) which is formed on the gate insulation film; and a source (240) and a drain electrode (250) which are formed on the oxide semiconductor layer to expose the oxide semiconductor layer. A field effect transistor biosensor detects components of a biomaterial (260) through current-voltage characteristics by bonding the biomaterial to a part of the oxide semiconductor layer which is exposed between the source and the drain electrode.