发明名称 Simultaneous development of complementary IC families
摘要 Two (or more) different, but complementary, families of integrated circuits having the same layout are developed simultaneously where the different families are achieved by changing one or more design parameters of transistors used to implement the integrated circuits. For example, a low-power (but low-speed) family of one or more ICs (e.g., for handheld applications) can be achieved by designing at least some transistors with relatively high threshold-voltage (Vt) levels, while a different, but complementary, high-speed (but high-power) family of one or more ICs (e.g., for server applications) can be achieved by designing corresponding transistors with relatively low Vt levels. In this way, the two families can share in common all but a very few masks used to fabricate the ICs of the different families.
申请公布号 US8539409(B1) 申请公布日期 2013.09.17
申请号 US201113178599 申请日期 2011.07.08
申请人 MURRAY SHAWN;SCHADT JOHN;FONG STEVEN J.;CHAU LUAN PHOC;GUSTAFSON THOMAS R.;LATTICE SEMICONDUCTOR CORPORATION 发明人 MURRAY SHAWN;SCHADT JOHN;FONG STEVEN J.;CHAU LUAN PHOC;GUSTAFSON THOMAS R.
分类号 G06F17/50 主分类号 G06F17/50
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