| 摘要 |
PURPOSE: A substrate metalizing device and a method thereof are provided to improve the efficiency of a substrate metalizing process by forming a middle layer of a substrate and a DLC(Diamond Like Carbon) thin film. CONSTITUTION: A substrate metalizing device comprises a process chamber and an ion beam source unit. The ion beam source unit irradiates ion beams to a substrate, thereby forming a DLC thin film on the substrate. The ion beam source unit includes a cathode and an anode which becomes ionized by gas flow. An anode protecting unit(140) protecting the anode by reducing deposit speed of foreign materials including carbon which may be produced in the anode during metalizing process. |
