METHOD OF MANUFACTURING SILICON NANOWIRE AND ELECTRONIC DEVICE INCLUDING SILICON NANOWIRE

摘要

PURPOSE: A manufacturing method of silicon nanowire is provided to easily form at least two silicon nanowires for an electronic device on one bulk type single crystal silicon substrate by controlling a concentration gradient and a kind of foreign matter which is injected into multiple silicon nanowires with using a photo mask. CONSTITUTION: A manufacturing method of silicon nanowire comprises the following steps. A first thermal oxide film, a silicon nitride film and photoresist pattern are formed on a bulk type single crystal silicon substrate (110) in order. The silicon nitride film and the first thermal oxide film are dry etched with having the photoresist pattern as a mask. The silicon substrate is dry etched, and multiple silicone columns (SC) are formed by having the dry etched silicon nitride film as the mask. Multiple silicone columns are wet etched, and multiple silicone columns in which cross section of a triangle and a reverse triangle are connected are formed on the lower part of the first thermal oxide film. Wet etched multiple silicone columns is thermal oxidized and a second thermal oxide film is formed. Multiple silicon nanowires (SiNW) are formed from the cross section of the reverse triangle. The silicon nitride film is removed, and respective foreign matter is selectively injected in the multiple silicon nanowires and heat treated. The first thermal oxide film and the second thermal oxide film are removed.