| 发明名称 |
METHOD OF MANUFACTURING A FIN FET |
| 摘要 |
<p>PURPOSE: A method for manufacturing a fin field effect transistor is provided to form a fin body of uniform width by preventing the variation of a deposition thickness. CONSTITUTION: A first thin film (102) is formed on a semiconductor substrate (100). A second thin film (104) is formed on the semiconductor substrate. The second thin film is patterned. A second pattern is formed on the first thin film. A third thin film is formed along the surface profile of the first thin film.</p> |
| 申请公布号 |
KR20130101716(A) |
申请公布日期 |
2013.09.16 |
| 申请号 |
KR20120022658 |
申请日期 |
2012.03.06 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE, DONG JIN |
| 分类号 |
H01L21/336;H01L29/78 |
主分类号 |
H01L21/336 |
| 代理机构 |
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代理人 |
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| 主权项 |
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