发明名称 Plasma source for uniform plama density and plasma chamber using the same
摘要 PURPOSE: A plasma source for uniform plasma density and a plasma chamber using the same are provided to secure the uniformity of DC by precisely controlling the plasma density. CONSTITUTION: A plasma source(100) includes an upper electrode plate(112) arranged on the upper part. The upper electrode plate is in the shape of a circle having a larger area than the area of a wafer. The upper part of the upper electrode plate is connected to a first RF source and a second RF source. Multiple unit coils(120) are arranged on the lower side of a vertical rod. The unit coil includes a first coil(121), a second coil(122), and a third coil(123). The unit coil is extended from the lower side of the vertical rod.
申请公布号 KR101308687(B1) 申请公布日期 2013.09.13
申请号 KR20110059722 申请日期 2011.06.20
申请人 发明人
分类号 H01L21/3065;H05H1/24;H05H1/46 主分类号 H01L21/3065
代理机构 代理人
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