NONVOLATILE MEMORY DEVICE AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A non-volatile memory device and a manufacturing method thereof are provided to increase the degree of integration by arranging unit memory cells in a vertical direction. CONSTITUTION: A first interlayer dielectric and a second interlayer dielectric are alternately laminated. A gate pattern is arranged between the first interlayer dielectric and the second interlayer dielectric. A channel pattern (115) passes through the first interlayer dielectric and the second interlayer dielectric. A trapping layer (122) is arranged between the gate pattern and the channel pattern. A charge diffusion barrier layer (150) is arranged between the channel pattern and the second interlayer dielectric.