| 摘要 |
PROBLEM TO BE SOLVED: To obtain an advantageous technique for manufacturing a large solid state imaging device having high resolution and image quality.SOLUTION: A method of manufacturing a solid state imaging device includes a plurality of photo-lithography steps. The plurality of photo-lithography steps includes: at least one first lithography step including a division exposure step of exposing a substrate using a plurality of photo masks, and at least one second lithography step including a non-division exposure step of exposing the substrate using one photo mask. The at least one first lithography step includes a step of forming a resist pattern for defining an active region 110 on the substrate, and a lithography step of forming a resist pattern for defining a charge storage region 112. |
