| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device in which, even if a junction bump is raised by stable jointing, insufficient junction does not occur, an internal stress caused by thermal stress is reduced, and a damage on a passivation film is eliminated.SOLUTION: On a gold-plated bonding land 21 which is an upper layer of a peripheral type interposer 17, a single stage of gold bump 24 is formed, and a resist 23 is formed on a dummy land 22 disposed at a central portion. In a semiconductor element 10, a single stage of gold bump 24 is respectively formed on a dummy bonding pad 25 and a bonding pad 11 of which an upper layer is gold-plated. A flip chip jointing of a multi-stage bump is performed by the bumps 24. A GGI method using heat, ultrasonic wave, or pressure is applied to the jointing. |
