| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming graphene onto an SiC surface at a low temperature, which can form one or a plurality of high quality graphene layers free from defects caused by heat by preparing such a state that C atoms are excessive on the SiC surface of an SiC layer or the like, epitaxially grown on a single crystal SiC substrate or Si substrate, and thereafter, performing a vacuum heat treatment at a low temperature so that large steps or defects derived from the steps are not introduced.SOLUTION: A method for forming graphene includes: a surface oxidation process for forming an SiOcoating 4 on a surface layer by oxidizing a crystalline SiC surface 3 by a process at a temperature close to room temperature and segregating C atoms 5 on the interface between the SiOcoating and the SiC crystal; an oxidized coating removing process for removing the SiOcoating by a process at a temperature close to room temperature while leaving the C atoms 5 segregated in the interface; and a heat treatment process for forming one or a plurality of graphene layers 6 by heating the SiC surface in a state that C atoms are excessive in vacuum at a temperature at which Si sublimation does not occur. |
