| 摘要 |
PROBLEM TO BE SOLVED: To provide a technique advantageous to reduce a static capacitance error between lines in a boundary region.SOLUTION: A manufacturing method of a semiconductor device having a first region and a second region tangent to each other at a boundary line includes a photolithography process for forming a pattern including a line portion on the boundary line of which width is identified by a first line, disposed in the first region, in parallel to the boundary line and a second line, disposed in the second region, in parallel to the boundary line. The photolithography process includes an exposure process for performing first exposure to identify the first line and second exposure to identify the second line individually for a photoresist coated on a substrate, and a process for developing the photoresist passing through the exposure process. |
