发明名称 Nanoscale lithography method on graphene using oxidation and hydrogenation
摘要 PURPOSE: A system for manufacturing the nano lithography of graphene using oxidization and hydrogenation and a method for the same are provided to omit chemical treatment and to use an atomic force microscope. CONSTITUTION: Oxidized patterns through an atomic force microscope-anodic lithography or hydrogenated patterns through an atomic force microscope-cathodic lithography are formed on graphene in order to form nano-sized oxidizing or hydrogenating process patterns on the graphene. In the atomic force microscope-anodic lithography, a tip and the graphene with a contact mode are fixed at 0.1um/s under room temperature and 20% relative humidity, and a voltage between the tip and the graphene is increased. In the atomic force microscope-cathodic lithography, the tip and the graphene with a contact mode are fixed at 0.1um/s under room temperature and 33% relative humidity, and a voltage between the tip and the graphene is increased.
申请公布号 KR101307538(B1) 申请公布日期 2013.09.12
申请号 KR20110002159 申请日期 2011.01.10
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分类号 B82B3/00;G03F7/20 主分类号 B82B3/00
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