发明名称 SUBSTRATE PROCESSING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a substrate processing apparatus which can perform a process on a main surface of the substrate using the chemical solution favourably by maintaining the chemical solution on the main surface of the substrate at a high temperature.SOLUTION: A substrate processing apparatus 1 includes: a wafer rotation mechanism 3 holding a wafer W; a peeling liquid nozzle 4 supplying an SPM liquid onto a surface of the wafer W held by the wafer rotation mechanism 3; and a heater head 35 which has an infrared lamp 38, is disposed facing the surface of the wafer W held by the wafer rotation mechanism 3, and heats the SPM liquid supplied onto the surface of the wafer W with infrared ray radiation from the infrared lamp 38. The heater head 35 is moved along the surface of the wafer W held by the wafer rotation mechanism 3.
申请公布号 JP2013182957(A) 申请公布日期 2013.09.12
申请号 JP20120044650 申请日期 2012.02.29
申请人 DAINIPPON SCREEN MFG CO LTD 发明人 MURAMOTO RYO;HAYASHI TOYOHIDE;HASHIMOTO MITSUHARU
分类号 H01L21/027;H01L21/304 主分类号 H01L21/027
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