发明名称 SEMICONDUCTOR DEVICE
摘要 When a material of an organic substrate is glass epoxy and a material of a semiconductor chip is silicon or gallium arsenide, a substrate warp sometimes occurs because of a difference between thermal expansion coefficients of the materials. The shape of the antenna formed on the organic substrate due to such a substrate warp, so that the characteristics of the antenna are sometimes shifted from desired values. An antenna is provided on the substrate on which a semiconductor chip is mounted, and is covered with a resin. The resin has enough hardness to suppress the warp caused by joining the semiconductor chip and the substrate and a transformation of the antenna. By changing a connection relation of adjustment vias after the manufacture of the semiconductor device, the characteristic of the antenna can be changed.
申请公布号 US2013234304(A1) 申请公布日期 2013.09.12
申请号 US201313783243 申请日期 2013.03.02
申请人 RENESAS ELECTRONICS CORPORATION 发明人 TAMAKI NAOYA
分类号 H01L23/498;H01L23/552 主分类号 H01L23/498
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