发明名称 SENSOR DEVICE
摘要 PROBLEM TO BE SOLVED: To further surely protect a circuit from being contaminated or a disturbed from the outside in a sensor device having a monolithic structure in which a sensor and the circuit are integrally formed.SOLUTION: A sensor 33 is provided at the central part of the upper surface of a semiconductor substrate 32 such as an Si substrate. Additionally, a circuit 34 is provided on the upper surface of the semiconductor substrate 32 so as to encircle the sensor 33. The upper surface of the circuit 34 is covered by an insulating coating layer 45 formed of SiO. Furthermore, a protective film 41 of the sensor 33 also extends to the circuit 34 and covers the upper part of the circuit 34 from above the insulating coating layer 45. Moreover, almost the whole of the upper part of the circuit 34 is covered with a metal protective film 46 formed on the protective film 41.
申请公布号 JP2013180345(A) 申请公布日期 2013.09.12
申请号 JP20120043380 申请日期 2012.02.29
申请人 OMRON CORP 发明人 KASAI TAKASHI
分类号 B81B3/00;H01L29/84;H04R19/04 主分类号 B81B3/00
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