| 摘要 |
PROBLEM TO BE SOLVED: To provide a structure and manufacturing method of an element in which speed of switching between a high resistance state and a low resistance state is improved, deterioration of the element due to the oxidation of an electrode is prevented, and variations between elements is reduced.SOLUTION: In a nonvolatile semiconductor storage device, a specific metal (e.g. Pt) is deposited on one surface of a perovskite oxide, heat treatment is performed under a hydrogen atmosphere so as to introduce hydrogen ion to the perovskite oxide by using hydrogen catalysis of the metal, a hydrogen reduction layer (a high resistance layer) is formed in an adjacent area being in contact with the metal of the perovskite oxide, and a hysteresis characteristic in a current-voltage characteristic between an electrode composed of the metal and another electrode (e.g. Au) paired through the oxide reduction layer is utilized. |
