| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that attains low ON resistance and a stable withstand voltage, and has improved unbalance tolerance.SOLUTION: A semiconductor device includes a first semiconductor region, a second semiconductor region, a third semiconductor region, a fourth semiconductor region, an insulation film, a control electrode, and a first electrode and a second electrode. The first semiconductor region includes silicon carbide of a first conductivity type and has a first portion. The second semiconductor region is on the upper side of the first semiconductor region and provided adjacent to the first portion, and includes silicon carbide of a second conductivity type. The third semiconductor region is on the upper side of the second semiconductor region and provided apart from the first portion, and includes silicon carbide of a first conductivity type. The fourth semiconductor region is provided on the upper side of the second semiconductor region, and includes silicon carbide of a second conductivity type. Regions of the second semiconductor region on the sides contacting the third semiconductor region and the fourth semiconductor region have a higher impurity concentration than on the side contacting the first portion. |
