发明名称 |
LOCAL SELF-BOOST USING A PLURALITY OF CUT-OFF CELLS ON A SINGLE SIDE OF A STRING OF MEMORY CELLS |
摘要 |
Methods for local self-boost of a selected memory cell channel, memory devices, and systems are disclosed. One such method generates a cut-off channel under each of a plurality of memory cells on one of either a source side or a drain side of a selected memory cell.
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申请公布号 |
US2013235660(A1) |
申请公布日期 |
2013.09.12 |
申请号 |
US201213413762 |
申请日期 |
2012.03.07 |
申请人 |
SAKUI KOJI;MATSUYAMA YASUSHI;FISHER RYAN G.;MICRON TECHNOLOGY, INC. |
发明人 |
SAKUI KOJI;MATSUYAMA YASUSHI;FISHER RYAN G. |
分类号 |
G11C16/10;G11C16/04 |
主分类号 |
G11C16/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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