发明名称 |
Methods and Apparatus for Resistive Random Access Memory (RRAM) |
摘要 |
Methods and apparatuses for a resistive random access memory (RRAM) device are disclosed. The RRAM device comprises a bottom electrode, a resistive switching layer disposed on the bottom electrode, and a top electrode disposed on the resistive switching layer. The resistive switching layer is made of a composite of a metal, Si, and O. There may be an additional tunnel barrier layer between the top electrode and the bottom electrode. The top electrode and the bottom electrode may comprise multiple sub-layers. |
申请公布号 |
US2013234094(A1) |
申请公布日期 |
2013.09.12 |
申请号 |
US201213416183 |
申请日期 |
2012.03.09 |
申请人 |
CHANG TING-CHANG;SYU YONG-EN;JIAN FU-YEN;CHANG SHIH-CHIEH;WANG YING-LANG;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHANG TING-CHANG;SYU YONG-EN;JIAN FU-YEN;CHANG SHIH-CHIEH;WANG YING-LANG |
分类号 |
H01L45/00 |
主分类号 |
H01L45/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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