| 摘要 |
PROBLEM TO BE SOLVED: To provide an ESD protection element which is suitable for technology such as high speed bipolar process technology.SOLUTION: A thyristor includes: a first conductive type semiconductor substrate 100 forming a collector of a first bipolar transistor PNP1; a second conductive type first semiconductor layer 101 that is formed on the semiconductor substrate 100 and is used as a base of the first bipolar transistor PNP1 and a collector of the second bipolar transistor NPN1; a first conductive type second semiconductor layer 102 formed on the semiconductor substrate 100 so as to be arranged in parallel with the first semiconductor layer 101; and a first conductive type third semiconductor layer 103 formed on the first and second semiconductor layers 101, 102 and forming a base of the second bipolar transistor. The semiconductor substrate 100 is connected with the third semiconductor layer 103 by the second semiconductor layer 102. |
