发明名称 |
VERTICAL TRENCH IGBT AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
A method for manufacturing a vertical trench IGBT includes: forming a body layer of a second conductivity type on a semiconductor substrate of a first conductivity type; forming a trench passing through the body layer; forming a trench gate in the trench via a gate insulating film; forming a polysilicon film containing an impurity of a first conductivity type on the body layer; diffusing the impurity from the polysilicon film into the body layer to form an emitter layer of a first conductivity type on the body layer; and forming a collector layer of a second conductivity type on a lower surface of the semiconductor substrate.
|
申请公布号 |
US2013234200(A1) |
申请公布日期 |
2013.09.12 |
申请号 |
US201213619395 |
申请日期 |
2012.09.14 |
申请人 |
FUJII HIDENORI;MITSUBISHI ELECTRIC CORPORATION |
发明人 |
FUJII HIDENORI |
分类号 |
H01L29/739;H01L21/331 |
主分类号 |
H01L29/739 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|