发明名称 SEMICONDUCTOR CONSTRUCTIONS
摘要 Some embodiments include a planarization method. A liner is formed across a semiconductor substrate and along posts that extending upwardly from the substrate. Organic fill material is formed over the liner and between the posts. A planarized surface is formed which extends across the posts and across one or both of the liner and the fill material. Some embodiments include a semiconductor construction containing a semiconductor die. Electrically conductive posts extend through the die. The posts have upper surfaces above a backside surface of the die, and have sidewall surfaces extending between the backside surface and the upper surfaces. A liner is across the backside surface of the die and along the sidewall surfaces of the posts. Electrically conductive caps are over the upper surfaces of the posts, and have rims along the liner adjacent the sidewall surfaces of the posts.
申请公布号 US2013234319(A1) 申请公布日期 2013.09.12
申请号 US201213418113 申请日期 2012.03.12
申请人 GANDHI JASPREET S.;MICRON TECHNOLOGY, INC. 发明人 GANDHI JASPREET S.
分类号 H01L23/498;H01L21/768 主分类号 H01L23/498
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