| 发明名称 |
NITRIDE SEMICONDUCTOR ELEMENT AND NITRIDE SEMICONDUCTOR WAFER |
| 摘要 |
According to one embodiment, a nitride semiconductor element includes a foundation layer, a functional layer and a stacked body. The stacked body is provided between the foundation layer and the functional layer. The stacked body includes a first stacked intermediate layer including a first GaN intermediate layer, a first high Al composition layer of Alx1Ga1-x1N (0<x1@1) and a first low Al composition layer. A compressive strain is applied to the first low Al composition layer. Unstrained GaN has a first lattice spacing. The Alx1Ga1-x1N (0<x1@1) when unstrained has a second lattice spacing. The first high Al composition layer has a third lattice spacing. An Al composition ratio of the first low Al composition layer is not more than a ratio of a difference between the first and third lattice spacings to a difference between the first and second lattice spacings. |
| 申请公布号 |
US2013234151(A1) |
申请公布日期 |
2013.09.12 |
| 申请号 |
US201213602868 |
申请日期 |
2012.09.04 |
| 申请人 |
HIKOSAKA TOSHIKI;HARADA YOSHIYUKI;YOSHIDA HISASHI;SUGIYAMA NAOHARU;NUNOUE SHINYA;KABUSHIKI KAISHA TOSHIBA |
发明人 |
HIKOSAKA TOSHIKI;HARADA YOSHIYUKI;YOSHIDA HISASHI;SUGIYAMA NAOHARU;NUNOUE SHINYA |
| 分类号 |
H01L29/20 |
主分类号 |
H01L29/20 |
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