| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon nitride circuit substrate which is improved in joint strength and thermal cycle resistance by improving a state of a junction interface between a ceramic substrate and a brazing material, and also a method for manufacturing the same.SOLUTION: A silicon nitride circuit substrate is formed by jointing a silicon nitride substrate containing magnesium of 0.6 to 7.0 wt.% in terms of magnesium oxide (MgO), a group 3a element (3A) in the periodic table in a total amount of 0.7 to 8.0 wt% with the magnesium oxide in terms of an oxide (3AxOy), and a MgO/3AxOy having a weight ratio in the range of 1 to 70, and a metal circuit plate made of Al or A1 alloy through an Al-Si-based brazing material whose content of Si is 7 wt.% to 20 wt.% and content of Mg is 0.05 wt.% or less. On the junction interface between the silicon nitride substrate and the brazing material, a reaction generation layer is formed which is composed of at least two layers and whose thickness is 10 nm to 500 nm. |
