| 摘要 |
PROBLEM TO BE SOLVED: To suppress variation in device characteristics caused by variation in temperature during manufacturing of an image pickup device region, thereby improving the quality.SOLUTION: There is provided an image sensor comprising: an image pickup device region 20 formed by arranging a plurality of image pickup devices 21 on a semiconductor substrate 10 and including a device separation part 23 configured to separate the image pickup devices 21; and a logic circuit region 30 formed in a region different from the image pickup device region 20 on the substrate 10 and including a plurality of gate patterns 35. A dummy device separation part 45 is formed at a constant pitch in a boundary region 40 between the image pickup device region 20 and the logic circuit region 30. |
