发明名称 LOW-TEMPERATURE SYNTHESIS OF SILICA
摘要 An ambient pressure Atomic Layer Deposition (ALD) technique to grow uniform silica layers onto organic substrates at low temperatures, including room temperature, is described. For example, tetramethoxysilane vapor is used alternately with ammonia vapor as a catalyst in an ambient environment.
申请公布号 US2013236641(A1) 申请公布日期 2013.09.12
申请号 US201113702497 申请日期 2011.06.08
申请人 AIZENBERG JOANNA;HATTON BENJAMIN;PRESIDENT AND FELLOWS OF HARVARD COLLEGE 发明人 AIZENBERG JOANNA;HATTON BENJAMIN
分类号 C23C16/40 主分类号 C23C16/40
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