发明名称 LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF
摘要 A light emitting diode includes a substrate, a transitional layer on the substrate and an epitaxial layer on the transitional layer. The transitional layer includes a planar area with a flat top surface and a patterned area with a rugged top surface. An AlN material includes a first part consisting of a plurality of spheres and a second part consisting of a plurality of slugs. The spheres are on a top surface of the transitional layer, both at the planar area and the patterned area. The slugs are in grooves defined in the patterned area. Air gaps are formed between the slugs and a bottom surface of the epitaxial layer. The spheres and slugs of the AlN material help reflection of light generated by the epitaxial layer to a light output surface of the LED.
申请公布号 US2013234150(A1) 申请公布日期 2013.09.12
申请号 US201213600137 申请日期 2012.08.30
申请人 HUANG CHIA-HUNG;HUANG SHIH-CHENG;TU PO-MIN;LIN YA-WEN;YANG SHUN-KUEI;ADVANCED OPTOELECTRONIC TECHNOLOGY, INC. 发明人 HUANG CHIA-HUNG;HUANG SHIH-CHENG;TU PO-MIN;LIN YA-WEN;YANG SHUN-KUEI
分类号 H01L33/22;H01L33/58 主分类号 H01L33/22
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