| 发明名称 |
SEMICONDUCTOR POWER DEVICE INTEGRATED WITH ESD PROTECTION DIODES |
| 摘要 |
A semiconductor power device integrated with ESD protection diode is disclosed by offering a dopant out-diffusion suppression layers prior to source dopant activation or diffusion to enhance ESD protection capability between gate and source. |
| 申请公布号 |
US2013234238(A1) |
申请公布日期 |
2013.09.12 |
| 申请号 |
US201213542753 |
申请日期 |
2012.07.06 |
| 申请人 |
HSIEH FU-YUAN;FORCE MOS TECHNOLOGY CO., LTD. |
发明人 |
HSIEH FU-YUAN |
| 分类号 |
H01L27/06;H01L21/20 |
主分类号 |
H01L27/06 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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