| 摘要 |
<p>The present invention relates to a new macromolecular photo-acid generator based on poly(p-hydroxy styrene) (PHS), the synthesis process and use thereof in a chemically amplified photoresist. The poly(p-hydroxy styrene) derivate contains, on some of the benzene rings, sulfonium salt photo-acid generating groups and some of the phenolic hydroxyl groups are protected by acid decomposable protecting groups. When exposed to light, the acid-generating groups produce a strong acid, and the acid catalyzes the decomposition of the protecting groups under post-baking conditions, releasing phenolic hydroxyl groups, leading to an increase in alkali solubility of the exposed part, and the exposed part can develop and form images with diluted alkaline water. Therefore, the product can be used as a macromolecular acid generator or a novel chemically-amplified positive single-component photoresist material, and a chemically amplified resist capable of being used in deep ultra-violet photoetching, e-beam photoetching, and other next generation techniques for processing super large-scale integrated circuits, such as extreme ultra-violet photoetching, X-ray photoetching, etc.</p> |
