发明名称 METHOD FOR FORMING ELECTRODE OF PTC ELEMENT, AND PTC ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide a method for forming an electrode of a PTC element, capable of reducing interface resistance between a PTC element assembly and an electrode, the PTC element being manufactured using a semiconductor porcelain composition in which a part of Ba of BaTiOis substituted with Bi-Na.SOLUTION: A method for forming an electrode of a PTC element includes a step of preparing a semiconductor porcelain composition represented by a composition formula: [(Bi-Na)(BaR)][TiM]O(where R represents at least one selected from among rare earth elements including Y, M represents at least one selected from among Nb, Ta and Sb) while the x, y and z satisfy relationships of 0<x&le;0.30, 0&le;y&le;0.020 and 0&le;z&le;0.010, coating an electrode paste on the semiconductor porcelain composition, performing heat treatment to remove a binder in the electrode paste, and then performing baking treatment. The baking treatment is performed in a condition at 500°C or above and 700°C or below for 5 minutes or more and 30 minutes or less in a non-oxidizing atmosphere with an oxygen concentration of 2% or less.
申请公布号 JP2013182932(A) 申请公布日期 2013.09.12
申请号 JP20120044100 申请日期 2012.02.29
申请人 HITACHI METALS LTD 发明人
分类号 H01C17/30;C04B35/468;H01C7/02 主分类号 H01C17/30
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