| 摘要 |
PROBLEM TO BE SOLVED: To enhance a degree of freedom of layout design in a semiconductor device including a thyristor element as an electrostatic protection circuit.SOLUTION: A semiconductor device includes: a first first-conductivity-type well (NW1) that is formed to extend in a first direction (horizontal direction) parallel to a substrate; a second first-conductivity-type well (NW2a) that is formed to extend in a second direction (vertical direction) parallel to the substrate and orthogonal to the first direction and whose one end is connected to a long side of the first first-conductivity-type well (NW1); a second-conductivity-type well (PW) that is formed around the first first-conductivity-type well (NW1) and the second first-conductivity-type well (NW2a); a first high-concentration second-conductivity-type region (PP1a) that is formed for a surface of the second first-conductivity-type well (NW2) to extend in the second direction; and a first high-concentration first-conductivity-type region (NP1a) that is formed for a surface of the second-conductivity-type well (PW) to extend in the second direction while opposing the first high-concentration second-conductivity-type region (PP1a). |
