| 摘要 |
PROBLEM TO BE SOLVED: To improve bond strength between an SnNb target material and a backing plate.SOLUTION: An Ni layer 3 having thickness of 5 μm to 30 μm and a Cu layer 4 having thickness of 5 μm to 30 μm are laminated on a surface of an SnNb target material 2 in this order, and the Cu layer 4 and a backing plate 5 are bonded by solder 6 including In or In alloy in a portion therebetween. The Ni layer 3 and the Cu layer 4 on the surface of the SnNb target material 2 are formed by ion plating. |
