发明名称 SOLID STATE IMAGE PICKUP DEVICE AND METHOD OF MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a technique advantageous in securely insulating a conductor arranged penetrating a semiconductor layer in an easy method.SOLUTION: A solid state image pickup device which has a semiconductor layer 104 and a multi-layer wiring layer 102 includes an opening 108 which penetrates the semiconductor layer 104 and reaching a conductive layer 103 in the multi-layer wiring layer 102, a conductor 110 disposed in the opening 108 to be connected to the conductive layer 103, and a groove 109 surrounding the opening 108 and penetrating the semiconductor layer 104. The semiconductor layer 104 includes a wall portion WP disposed between a side face of the opening 108 and an inner side face of the groove 109 so as to surround the conductor 110.
申请公布号 JP2013182941(A) 申请公布日期 2013.09.12
申请号 JP20120044299 申请日期 2012.02.29
申请人 CANON INC 发明人 SHIMOTSUSA MINEO
分类号 H01L27/14;H01L27/146;H04N5/369;H04N5/374 主分类号 H01L27/14
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