发明名称 WET-CHEMICAL SYSTEMS AND METHODS FOR PRODUCING BLACK SILICON SUBSTRATES
摘要 A wet-chemical method of producing a black silicon substrate. The method comprising soaking single crystalline silicon wafers in a predetermined volume of a diluted inorganic compound solution. The substrate is combined with an etchant solution that forms a uniform noble metal nanoparticle induced Black Etch of the silicon wafer, resulting in a nanoparticle that is kinetically stabilized. The method comprising combining with an etchant solution having equal volumes acetonitrile/acetic acid:hydrofluoric acid:hydrogen peroxide.
申请公布号 US2013234072(A1) 申请公布日期 2013.09.12
申请号 US201013825541 申请日期 2010.11.11
申请人 YOST VERNON;YUAN HAO-CHIH;PAGE MATTHEW;ALLIANCE FOR SUSTANABLE ENERGY, LLC 发明人 YOST VERNON;YUAN HAO-CHIH;PAGE MATTHEW
分类号 H01L21/306 主分类号 H01L21/306
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