发明名称 |
SIDEWALL TEXTURING OF LIGHT EMITTING DIODE STRUCTURES |
摘要 |
A light emitting diode is made using a laser to texture the sidewalls of the bottom contact layer, without damaging a mesa. To do so, the substrate is mounted on a laser machining platform, and trenches are cut along lines through the semiconductor layer on the substrate using a first sequence of laser pulses having short pulse lengths that result in formation of textured sidewalls in the trenches, without causing recasting of the material. Then the substrate can be scribed along the lines of the trenches using a second sequence of laser pulses for singulation of die.
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申请公布号 |
US2013234149(A1) |
申请公布日期 |
2013.09.12 |
申请号 |
US201213417059 |
申请日期 |
2012.03.09 |
申请人 |
HALDERMAN JONATHAN D.;CHACIN JUAN;CHYR IRVING;ELECTRO SCIENTIFIC INDUSTRIES, INC. |
发明人 |
HALDERMAN JONATHAN D.;CHACIN JUAN;CHYR IRVING |
分类号 |
H01L33/32;H01L33/48;H01L33/60 |
主分类号 |
H01L33/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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