发明名称 SIDEWALL TEXTURING OF LIGHT EMITTING DIODE STRUCTURES
摘要 A light emitting diode is made using a laser to texture the sidewalls of the bottom contact layer, without damaging a mesa. To do so, the substrate is mounted on a laser machining platform, and trenches are cut along lines through the semiconductor layer on the substrate using a first sequence of laser pulses having short pulse lengths that result in formation of textured sidewalls in the trenches, without causing recasting of the material. Then the substrate can be scribed along the lines of the trenches using a second sequence of laser pulses for singulation of die.
申请公布号 US2013234149(A1) 申请公布日期 2013.09.12
申请号 US201213417059 申请日期 2012.03.09
申请人 HALDERMAN JONATHAN D.;CHACIN JUAN;CHYR IRVING;ELECTRO SCIENTIFIC INDUSTRIES, INC. 发明人 HALDERMAN JONATHAN D.;CHACIN JUAN;CHYR IRVING
分类号 H01L33/32;H01L33/48;H01L33/60 主分类号 H01L33/32
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