| 摘要 |
<p>Provided is an interconnection structure that, in a display device such as an organic EL display or a liquid crystal display, has superior workability during wet etching even without providing an etch stop layer. The interconnection structure has, in the given order, a substrate, a semiconductor layer of a thin film transistor, and a metal interconnection film, and has a barrier layer between the semiconductor layer and the metal interconnection film. The semiconductor layer comprises an oxide semiconductor, the barrier layer has a layered structure of a high-melting-point metal thin film and a Si thin film, and the Si thin film is directly connected to the semiconductor layer.</p> |
