发明名称 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a plasma processing apparatus and processing method that use a spiral resonator with which a reflection wave is suppressed.SOLUTION: A plasma processing apparatus includes: a processing chamber that is arranged in a vacuum vessel, which can be decompressed, and in whose inside space plasma for processing a specimen that is a processing target arranged in the inside space is formed; means for supplying gas for plasma generation into the processing chamber; vacuum evacuation means for exhausting the inside of the processing chamber; a spiral resonance device composed of a spiral resonance coil installed outside the vacuum vessel and a shield arranged outside the resonance coil and electrically grounded; and a high frequency power source whose frequency is variable and which supplies high frequency power in a prescribed range to the resonance coil, wherein an electrical length of the resonance coil is set at an integral multiple of one wavelength at a prescribed frequency, a frequency matching device is included which is capable of adjusting the frequency of the high frequency power source so that reflection power of high frequency becomes the minimum, and a feeding point of the spiral resonance coil is connected to a ground potential using a variable capacitance element.
申请公布号 JP2013182966(A) 申请公布日期 2013.09.12
申请号 JP20120044939 申请日期 2012.03.01
申请人 HITACHI HIGH-TECHNOLOGIES CORP 发明人 MAEDA KENJI;YOSHIOKA TAKESHI;KAWASAKI HIROMICHI;SHIMOMURA TAKAHIRO
分类号 H01L21/3065;H05H1/46 主分类号 H01L21/3065
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