| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-gain semiconductor device by suppressing decrease in gain caused by increase in capacitor between a gate and a source by arranging a source field plate configured to suppress oscillation in the vicinity of the gate.SOLUTION: By arranging a shield plate electrode 30 short-circuited by a source terminal electrode S1 in the vicinity of a drain electrode 22, a region between a drain and a gate is electrically shielded, capacitor Cgd between the gate and the drain is reduced, and increase in capacitor Cgs between the gate and the source is suppressed. A source terminal electrode S1 including a via hole SC1 is arranged between an active region AA and a drain terminal electrode D1, and the shield plate electrode 30 is connected to the source terminal electrode S1. |
