发明名称 THIN-FILM TRANSISTOR ARRAY SUBSTRATE, MANUFACTURING METHOD THEREFOR, AND ELECTRONIC DEVICE
摘要 <p>A thin-film transistor array substrate, a manufacturing method therefor, and an electronic device. The manufacturing method for a thin-film transistor array substrate comprises: a first configuration process: forming a pattern of a pixel electrode (22) formed by a first transparent conducting layer, and patterns of a drain electrode and a source electrode which are formed by a first metal layer and are separated, and a data line (23) on a transparent substrate (21); a second configuration process: forming a pattern of a gate insulating layer (25) and a pattern of an active layer (24) formed by a transparent conducting layer on the transparent substrate (21) after the first configuration process; and a third configuration process: forming a pattern of a common electrode (26) formed by a second transparent conducting layer and a pattern of a grid electrode formed by a second metal layer, and a gate line (27) on the transparent substrate (21) after the second configuration process.</p>
申请公布号 WO2013131384(A1) 申请公布日期 2013.09.12
申请号 WO2012CN85482 申请日期 2012.11.28
申请人 BOE TECHNOLOGY GROUP CO., LTD. 发明人 NING, CE;ZHANG, XUEHUI;YANG, JING
分类号 H01L21/77;G02F1/1362;G02F1/1368;H01L21/311;H01L27/12 主分类号 H01L21/77
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