| 摘要 |
A method of manufacturing a nitride semiconductor light emitting device which includes forming an n-type semiconductor layer, forming an active layer on the n-type semiconductor layer, forming a superlattice layer by alternately stacking at least two nitride layers made of InxAlyGa(1-x-y)N (0@x@1, 0@y@1, and 0@x+y@1) having different energy bandgaps from each other and doped with a p-type dopant, and forming a p-type semiconductor layer on the superlattice layer. The forming of the superlattice layer is performed by adjusting a flow rate of a p-type dopant source gas to reduce the flow rate in a growth termination period of the superlattice layer by no greater than about half of the flow rate in a growth initiation period of the superlattice layer while being doped with the p-type dopant.
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