发明名称 |
FINFET DEVICE HAVING A STRAINED REGION |
摘要 |
A method of fabricating a semiconductor device includes providing a substrate having a fin disposed thereon. A gate structure is formed on the fin. The gate structure interfaces at least two sides of the fin. A stress film is formed on the substrate including on the fin. The substrate including the stress film is annealed. The annealing provides a tensile strain in a channel region of the fin. For example, a compressive strain in the stress film may be transferred to form a tensile stress in the channel region of the fin.
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申请公布号 |
US2013237026(A1) |
申请公布日期 |
2013.09.12 |
申请号 |
US201213416926 |
申请日期 |
2012.03.09 |
申请人 |
LEE TSUNG-LIN;YUAN FENG;CHIANG HUNG-LI;YEH CHIH CHIEH;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.,("TSMC") |
发明人 |
LEE TSUNG-LIN;YUAN FENG;CHIANG HUNG-LI;YEH CHIH CHIEH |
分类号 |
H01L29/78;H01L21/30 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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