发明名称 NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE
摘要 In one embodiment, a control circuit executes a first page writing operation, a first verify operations, a second page writing operation, a second verify operations, a step-up operation. The control circuit executes the first page writing operation which forms an intermediate distribution, and a first read operation which reads data form the intermediate distribution by using a determine voltage higher than a first verify voltage with a first value, and changes a second verify voltage based on the result of the first read operation.
申请公布号 US2013235662(A1) 申请公布日期 2013.09.12
申请号 US201213607699 申请日期 2012.09.08
申请人 FUJIU MASAKI;KABUSHIKI KAISHA TOSHIBA 发明人 FUJIU MASAKI
分类号 G11C16/34 主分类号 G11C16/34
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